1 igbts unit: mm 2PG353 insulated gate bipolar transistor n features l high breakdown voltage: v ces = 400v l allowing to control large current: i c(peak) = 150a l housed in the surface mounting package n applications l for flash-light for use in a camera 1: emitter 2: collector 3: gate u type package n absolute maximum ratings (t c = 25c) parameter collector to emitter voltage gate to emitter voltage collector current allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v ces v ges i c i cp p c t ch t stg ratings 400 16 5 150 10 1 150 - 55 to +150 unit v v a a w c c n electrical characteristics (t c = 25c) parameter collector to emitter cut-off current gate to emitter leakage current collector to emitter breakdown voltage gate threshold voltage collector to emitter saturation voltage input capacitance (common emitter) turn-on time (delay time) rise time turn-off time (delay time) fall time symbol i ces i ges v ces v ge(th) v ce(sat) c ies t d(on) t r t d(off) t f conditions v ce = 320v, v ge = 0 v ge = 12v, v ce = 0 i c = 1ma, v ge = 0 v ce = 10v, i c = 1ma v ge = 12v, i c = 5a v ge = 12v, i c = 150a v ce = 10v, v ge = 0, f = 1mhz v cc = 300v, i c = 130a v ge = 12v, r g = 25 w min 400 1 typ 2 1370 20 250 150 700 max 10 1 5 2 10 unit m a m a v v v pf ns ns ns ns 6.5 0.1 5.3 0.1 4.35 0.1 3.0 0.1 0.85 0.1 1 4.6 0.1 0.75 0.1 0.5 0.1 9.8 0.1 1.0 0.2 7.3 0.1 5.5 0.1 0.2max. 2.3 0.1 2.5 0.1 2.3 0.1 marking 2.5 0.1 0.05 to 0.15 1.0 0.1 23 maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
2 igbts i c ? v ce v ce(sat) ? i c i c ? v ge c ies , c oes , c res ? v ce v ce , v ge ? q g p c ? ta 2PG353 0 200 160 120 80 40 012 10 8 26 4 t c =25?c v ge =16v 12v 10v 8v 6v collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 10 1 3 0.3 0.01 1000 10 0.1 100 1 v ge =12v t c =25?c ta=0?c 25?c 100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 024 20 16 412 8 0 200 160 120 80 40 v ce =10v t c =25?c gate to emitter voltage v ge ( v ) collector current i c ( a ) 0 400 100 300 200 1 10 100 1000 10000 c ies c oes c res f=1mhz t c =25?c collector to emitter voltage v ce ( v ) input capacitance ( common emitter ) , output capacitance ( common emitter ) , reverse transfer capacitance ( common emitter ) c ies ,c oes ,c res ( pf ) 0 250 200 150 100 10 5 50 060 50 40 10 30 20 i c =5a t c =25?c gate to emitter voltage v ge ( v ) gate charge amount q g ( nc ) collector to emitter voltage v ce ( v ) 0 150 125 100 25 75 50 0 15 12 6 9 3 (1) t c =ta (2) with a 50 50 2mm al heat sink (3) without heat sink (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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